| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9775263 | Materials Science and Engineering: C | 2005 | 4 Pages |
Abstract
Direct examination of porous silicon (PS) by the use of high resolution transmission electron microscopy (HRTEM) allowed us to perform a deep insight into the formation mechanisms of this material. In particular, the structure of the PS/Si interface and that of the silicon nanocrystals that compose porous silicon were analyzed in detail. Furthermore, image processing was used to study in detail the structure of PS. The mechanism of PS formation and lattice matching between the PS layer and the Si substrate is analyzed and discussed. Finally, a formation mechanism for PS based on the experimental observations is proposed.
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Authors
R.J. MartÃn-Palma, L. Pascual, A.R. Landa-Cánovas, P. Herrero, J.M. MartÃnez-Duart,