Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9775271 | Materials Science and Engineering: C | 2005 | 6 Pages |
Abstract
SiC is a robust semiconductor material considered ideal for high-power application due to its material stability and large bulk thermal conductivity defined by the very fast phonons In this paper, however, we show that both material-interface scattering and total internal reflection significantly limit the SiC-nanostructure phonon transport and hence the heat dissipation in a typical device. For simplicity we focus on planar SiC nanostructures and calculate the thermal transport both parallel to the layers in a substrate/SiC/oxide heterostructure and across a SiC/metal gate or contact. We find that the phonon-interface scattering produces a heterostructure thermal conductivity significantly smaller than what is predicted in a traditional heat transport calculation. We also document that the high temperature heat flow across the metal/SiC interface is limited by total internal reflection effects and maximizes with a small difference in the metal/SiC sound velocities.
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Authors
E. Ziambaras, P. Hyldgaard,