| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9775304 | Materials Science and Engineering: C | 2005 | 6 Pages |
Abstract
Experimental evidence of strain below the quantum dots (QDs) has induced us to study the influence of very thin barrier GaAs layers on InGaAs/GaAs QDs structures. This In diffusion due to strain defines the Critical Barrier Thickness for the formation of quantum wells from three dimensional islands. A Critical Barrier Thickness of 6 nm was observed in the case of 1.8 nm In0.5Ga0.5As/GaAs QDs structures. Above this thickness stacked QDs show near perfect alignment, whilst below this thickness modulated QWs are observed. The structural behaviour is supported by photoluminescence (PL) characteristics.
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Authors
M. Gutiérrez, M. Hopkinson, H.Y. Liu, A.I. Tartakovskii, M. Herrera, D. González, R. GarcÃa,