Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9776234 | Synthetic Metals | 2005 | 4 Pages |
Abstract
We report that the organic thin film transistors were fabricated by the organic gate insulators transistor with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and 4,4â²-oxydianiline (ODA), and cured at 150 °C for 1 hour followed by 200 °C for 1 hour. Details on the explanation of organic thin-film transistors (OTFTs) electrical characteristics of 6FDA-ODA as gate insulators fabricated thermal co-deposition method.
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Authors
S.W. Pyo, D.H. Lee, J.R. Koo, J.H. Kim, J.H. Shim, J.S. Kim, Y.K. Kim,