| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9776236 | Synthetic Metals | 2005 | 4 Pages |
Abstract
We propose a new type organic light emitting transistor (OLET) combining static induction transistor (SIT) with double hetero junction type organic light emitting diodes (OLED) using n-type zinc oxide (ZnO) films which works as a transparent and electron injection layer. The device characteristics of newly developed OLED and ZnO-SIT showed relatively high luminance of about 500Â cd/m2 at 7.6Â mA/cm2 and is able to control by gate voltage as low as 1Â V, respectively. The crystal structure of the ZnO films as a function of Ar/O2 flow ratio and the basic characteristics of the OLET depending on the ZnO sputtering conditions are investigated. The results obtained here show that the OLET with using ZnO film is a suitable element for flexible sheet displays.
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Physical Sciences and Engineering
Materials Science
Biomaterials
Authors
Hiroyuki Iechi, Masatoshi Sakai, Kenji Nakamura, Masaaki Iizuka, Masakazu Nakamura, Kazuhiro Kudo,