Article ID Journal Published Year Pages File Type
9776460 Synthetic Metals 2005 4 Pages PDF
Abstract
Transport mechanism of rectifying D-σ-A-SAc molecule in the structure of vertical metal-molecule-metal (MMM) has been investigated by using variable temperature measurement. We successfully synthesized a novel D-σ-A-SAc molecule and fabricated the molecular rectifying array device by using self-assembly technique. The results of variable temperature measurements suggest that electron injection in the interface between electron donor molecule and Ti/Au electrode is dominated by a thermal emission with a barrier height of around 0.29 eV while carrier injection between thiolated A-σ-D molecule and gold electrode is dominated by tunneling with a barrier height of around 0.8 eV. Therefore, we suggest that the origin of rectification comes from energy differences of two interfacial barriers in MMM device.
Related Topics
Physical Sciences and Engineering Materials Science Biomaterials
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