Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9776460 | Synthetic Metals | 2005 | 4 Pages |
Abstract
Transport mechanism of rectifying D-Ï-A-SAc molecule in the structure of vertical metal-molecule-metal (MMM) has been investigated by using variable temperature measurement. We successfully synthesized a novel D-Ï-A-SAc molecule and fabricated the molecular rectifying array device by using self-assembly technique. The results of variable temperature measurements suggest that electron injection in the interface between electron donor molecule and Ti/Au electrode is dominated by a thermal emission with a barrier height of around 0.29Â eV while carrier injection between thiolated A-Ï-D molecule and gold electrode is dominated by tunneling with a barrier height of around 0.8Â eV. Therefore, we suggest that the origin of rectification comes from energy differences of two interfacial barriers in MMM device.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Do-Hyun Kim, Hyoyoung Lee, Taehyoung Zyoung,