Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783130 | Materials Chemistry and Physics | 2005 | 4 Pages |
Abstract
The organic contamination by volatile organics outgassed from the plastic wafer storage is one of the very important concerns in ultra clean processing of silicon surface. In this study, silicon surfaces have been artificially contaminated by above kind of volatile organics and subsequent cleaning has been performed by N2O electron cyclotron resonance (ECR) plasma treatment with different exposure times. A trace amount of contaminants on the silicon surface has been measured by attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The results indicate that efficient removal of organic contaminants from the semiconductor surface can be achieved with a short time exposure of N2O ECR plasma.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Dae Kyu Kim, Yun Kyu Park, Subhayan Biswas, Chongmu Lee,