Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783134 | Materials Chemistry and Physics | 2005 | 5 Pages |
Abstract
A technique in combination of theoretical and experimental methods was used to establish the energy band diagrams for the photo-electrochemical dissolution of n-Si(1Â 0Â 0) in various HF solutions. Based on theoretical calculation in the band gap of silicon and experimental measurements in both open circuit potential (OCP) and flatband voltage (Vfb) of the n-Si/HF, we successfully established the energy band diagrams, and estimated the activation energy (Eact) for the photo-electrochemical reaction of the system. The Eact data were advantageous to elucidate the reaction kinetics. The dissolution rate of silicon increased to a maximum with increasing the HF concentration from 0.5 to 2.0Â M; it decreased with further increasing in HF concentrations. This concentration effect could be interpreted in terms of energy band diagrams and the Eact data.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Wern-Dare Jehng, Jing-Chie Lin, Chien-Ming Lai, Sheng-Long Lee,