Article ID Journal Published Year Pages File Type
9783901 Materials Science and Engineering: B 2005 5 Pages PDF
Abstract
The improved thermal stability and hole μeff of a trilayer heterostructure makes it an ideal platform for fabricating high μeff MOSFETs that can be processed over higher temperatures without significant losses in hole μeff.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Improved thermal stability and hole mobilities in a strained-Si/strained-Si1−yGey/strained-Si heterostructure grown on a relaxed Si1−xGex buffer
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