| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9783903 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
We have then used Si0.49Ge0.51 virtual substrates as templates for the growth of Si/Ge dual channels. Although some dislocations were observed, mainly in the silicon layer, we have demonstrated the growth feasibility of such highly mismatched heterostructures in RP-CVD.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Y. Bogumilowicz, J.M. Hartmann, N. Cherkashin, A. Claverie, G. Rolland, T. Billon,