Article ID Journal Published Year Pages File Type
9783911 Materials Science and Engineering: B 2005 5 Pages PDF
Abstract
An improved technique is demonstrated to fabricate silicon-germanium on insulator (SGOI) starting with a sandwiched structure of Si/SiGe/Si. After oxidation of the sandwiched structure and successive annealing, a relaxed SiGe-on-insulator (SGOI) structure is produced. Our results indicate that the added Si cap layer is advantageous in suppressing Ge loss at the initial stage of SiGe oxidation and the subsequent annealing process homogenizes the Ge fraction. Raman measurements reveal that the strain in the SiGe layer is fully relaxed at high oxidation temperature (∼1150 °C) without generating any threading dislocations and crosshatch patterns, which generally exist in the relaxed SiGe layer on bulk Si substrate.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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