| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9783916 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
Concentration profiles of nitrogen and of accumulated oxygen in CzSi:N treated at â¤920 K were not affected markedly by HP. The strained nitride layers were formed in effect of the treatment at â¥1070 K. The treatments at â¥1270 K resulted in formation of the well-defined layered structures. Applied at 1400 K, HP assisted in a creation of the defect-free Si/Si3N4/Si structures.
Related Topics
Physical Sciences and Engineering
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Authors
A. Misiuk, B. Surma, A. Barcz, K. Orlinska, J. Bak-Misiuk, I.V. Antonova, S. Dub,