Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783917 | Materials Science and Engineering: B | 2005 | 5 Pages |
Abstract
Electron spin resonance (ESR) in combination with electrical analysis indicates basic differences in the defect properties of the (1Â 0Â 0)Ge/GeOxNy/HfO2 and (1Â 0Â 0)Ge/GeO2 interfaces with the seemingly isomorphic interfaces of (1Â 0Â 0)Si with the HfO2 and SiO2. ESR fails to reveal dangling bond centers associated with Ge crystal surface atoms-only paramagnetic defects originating from the near-interfacial Ge oxide or Ge (oxy)nitride layers are observed. In contrast to the amphoteric Pb-type centers (Si dangling bonds) commonly observed at the silicon/insulator interfaces, the major component of the Ge/insulator interface trap spectrum comes from slow acceptor states which appear resistant to passivation by hydrogen and show no immediate correlation with the observed paramagnetic centers.
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Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Stesmans, V.V. Afanas'ev,