| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9783921 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
The work carried out here examines the suitability of BBr2+ and B+Â +Â Br+ implants into crystalline (1Â 0Â 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr2+, eliminating the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evidence that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activation between the BBr2+ and B+Â +Â Br+ implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecular implant at lower annealing temperatures.
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Authors
J.A. Sharp, R.M. Gwilliam, B.J. Sealy, C. Jeynes, J.J. Hamilton, K.J. Kirkby,