Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783930 | Materials Science and Engineering: B | 2005 | 6 Pages |
Abstract
We furthermore demonstrate new experimental data for the upper yield stress of 300Â mm Si-ingots with different boron and nitrogen co-doping levels. Especially at high temperatures, the upper yield stress of high ohmic material drops down significantly thus making it necessary to use planar support geometries to diminish the gravitational induced bending stress.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
T. Müller, R. Wahlich, P. Krottenthaler, J. Studener, A. Kühhorn, W.v. Ammon,