Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783932 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 °C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of â¼2.1 eV.
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Authors
V.C. Venezia, R. Duffy, L. Pelaz, M.J.P. Hopstaken, G.C.J. Maas, T. Dao, Y. Tamminga, P. Graat,