Dislocation-impurity interaction in Si

Dynamic dislocation-impurity interactions in CZ-Si doped with light impurity (N), acceptor (B), donor (P, As, Sb) and neutral (Ge) impurities were investigated in comparison with those in undoped CZ-Si. Dislocation generation was effectively suppressed in B-, P- and As-doped Si when the concentration was higher than 1019 cm−3, while Ge impurity did not strongly suppress dislocation generation. Dislocations were immobilized by the stable complexes formed through the impurity segregation and reaction. It was found that B and N impurities promptly form strong locking agents, while P and As impurities form highly dense locking agents along dislocations. Dislocation velocity in Si doped with electrically active impurities increased with increasing concentrations of not only the donor (P, As, Sb) but also the acceptor (B) impurities in the temperature range of 650-950 °C. N and Ge impurities had no or little effect on the velocity of dislocations in motion. Co-doping of Si with Ge and B was effective for suppression of dislocation generation and retardation of dislocation velocity at low temperatures.