| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9783952 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
The effect of temperature on capacitance-voltage (C-V) characteristics of Si/SiO2 interfaces in SIMOX was investigated. The results obtained for SIMOX were compared with the C-V characteristics of Si/SiO2 and Si/SiNx devices. The results suggested that the positively charge centers in buried SiO2 layer were located closer to the superficial Si layer of SIMOX. These positively charged centers considerably affected the capacitance of SIMOX-based devices upon increase of device temperature. It was also found that the MOS type devices fabricated using SIMOX had a higher temperature effect than MIS structures.
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Authors
Ahalapitiya H. Jayatissa, Zhiyu Li,