| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9783971 | Materials Science and Engineering: B | 2005 | 6 Pages |
Abstract
This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
F. Boucard, F. Roger, I. Chakarov, V. Zhuk, M. Temkin, X. Montagner, E. Guichard, D. Mathiot,