Article ID Journal Published Year Pages File Type
9783972 Materials Science and Engineering: B 2005 4 Pages PDF
Abstract
We have simulated the boron-enhanced diffusion (BED) of boron implanted in silicon. We have used published data for B implantation with an energy of 500 eV in crystalline silicon. The simulation well reproduces the experimental profiles when sinks for interstitials are considered. Sources and sinks of self-interstitials are discussed as function of temperature.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in silicon
Authors
, , , ,