Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783975 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
We have investigated the influence of phosphorous implantation and annealing on the photoluminescence spectra of Si. The implantation was carried out at 750Â keV with doses between 1Â ÃÂ 1013 and 2Â ÃÂ 1014Â cmâ2. We show that the band edge luminescence of the implantation modified layer at room temperature is low compared to the luminescence from the substrate. The photoluminescence spectra at 80Â K are found to depend strongly on the annealing treatment performed (rapid thermal versus furnace annealing). For high implantation doses, a shift in the two-phonon-assisted line is observed and associated with a strong strain field. The band edge luminescence does not show quenching, but increases upon increase of temperature for the highest implantation dose.
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Authors
T. Arguirov, M. Kittler, W. Seifert, X. Yu,