Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783977 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
Silicon MOS structures with FeSi2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi2-Si MOS structures were measured as a function of temperature from 80Â K to 300Â K. Clear EL signals were observed even at room temperature for samples prepared at appropriate processing conditions. The EL spectra consist of two peaks, one attributed to FeSi2 and the other attributed to Si band edge emission. While the intensity of the FeSi2 peak showed the usual thermal quenching behavior, the Si band edge emission showed the opposite trend with its intensity increased with increasing temperature. Details of the line shapes and their temperature dependence are analyzed and discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
C.F. Chow, S.P. Wong, Y. Gao, N. Ke, Q. Li, W.Y. Cheung, M.A. Lourenco, K.P. Homewood,