Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783985 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
Annealing of bulk SiO at temperatures above 850 °C leads to the formation of Si nanocrystals embedded in an amorphous silicon oxide matrix. Structural investigations by X-ray diffraction and transmission electron microscopy reveal a broad size distribution with a large abundance of isolated Si nanocrystals below 5 nm. Strong photoluminescence emission spectra in the near-infrared region were recorded at room temperature and at 100 K with three main emission bands observed. Higher annealing temperatures resulted in increased emission intensities without significant changes in the spectral shape of the photoluminescence emission. This method could be a promising way to produce Si-based photoluminescent materials in large quantities.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
V. Kapaklis, C. Politis, P. Poulopoulos, P. Schweiss,