Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9783994 | Materials Science and Engineering: B | 2005 | 8 Pages |
Abstract
Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 °C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
K. Morigaki, K. Takeda, H. Hikita, P. Roca i Cabarrocas,