Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9784000 | Materials Science and Engineering: B | 2005 | 6 Pages |
Abstract
A silver contact with polysilicon fabricated on glass substrates was investigated both experimentally and theoretically by means of measured and 2D-simulated C-V characteristics. The in situ phosphorus-doped polysilicon layer is grown by a low-pressure chemical vapor deposition (LPCVD) technique and crystallized in a vacuum by thermal annealing. The measured Câ2-V characteristics of the Schottky contact at two frequencies reveals a linear behaviour at the 10 kHz curve and a distinct non-linear behaviour at the 300 kHz one. Extraction of the frequency independent capacitance by the Kevin method allows the determination of the values of doping concentration (ND = 5 Ã 1018 cmâ3) and Schottky barrier height (Ïb = 0.65 eV). The 2D-numerical simulation code of the Schottky contact C-V characteristics is also developed by considering that the inter-granular traps density NT is localized in the grain boundaries. The effects of the film doping concentration and the trap states density are investigated.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. Amrani, N. Benseddik, Z. Benamara, R. Menezla, M. Chellali, S. Tizi, T. Mohammed-Brahim,