Article ID Journal Published Year Pages File Type
9784025 Materials Science and Engineering: B 2005 7 Pages PDF
Abstract
A discussion is presented of new directions in ferroelectric random access memories (FRAMs) and ferroelectric capacitors for dynamic random access memories (DRAMs), emphasizing [3D] structures and new materials, as well as ferroelectric gates and new mechanisms of domain wall motion in nano-scale geometries.
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Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
New developments on FRAMs: [3D] structures and all-perovskite FETs
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