Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9784025 | Materials Science and Engineering: B | 2005 | 7 Pages |
Abstract
A discussion is presented of new directions in ferroelectric random access memories (FRAMs) and ferroelectric capacitors for dynamic random access memories (DRAMs), emphasizing [3D] structures and new materials, as well as ferroelectric gates and new mechanisms of domain wall motion in nano-scale geometries.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
J.F. Scott,