| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9784076 | Materials Science and Engineering: B | 2005 | 4 Pages |
Abstract
We use photoelectron spectroscopy to characterize the reactivity of Pr evaporated on SiO2 covered 4H-SiC substrates. We analyze the Si2p, C1s, and O1s core levels and find that Pr reacts at RT with the SiO2 layer to form Pr-silicate. In addition also Pr-silizide is formed as well as Pr-carbides. While the latter are formed as reaction intermediates after Pr evaporation, the Pr-silicate layer is formed upon annealing to 300 °C and is stable up to 800 °C.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D. SchmeiÃer, G. Lupina, H.J. Muessig,