Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology

A similar result is found for pMOS though the CET is varied less by the increased boron doping level. Boron penetration resulting in degraded TDDB reliability was observed for the physically thinnest split for excess boron doping by p-polysilicon ion-implantation. An additional nitrogen implant into the p-poly proved to prevent pMOS devices from reliability degradation, however, at the expense of any scalability margin that additional boron would eventually offer.