| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9785599 | Optics Communications | 2005 | 6 Pages |
Abstract
A broadband travelling-wave modulator is proposed based on Si2N2O substrate with ridge structure. The structure is analyzed using finite element method. At 1.5 μm wavelength the modulator operates with a 3 dB optical bandwidth of 119.37 GHz, a half-wave driving voltage of 3.5 V, and characteristic impedance of 50.32 Ω. The results show that broad bandwidth and low half-wave voltage can be achieved simultaneously.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Li Jiu-Sheng, He Sai-Ling,