| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9785836 | Optics Communications | 2005 | 5 Pages |
Abstract
In this Letter, we investigate the criteria for achieving an enhanced stable locking region in the parameter space of injected field Einj and frequency detuning Ï in two-section semiconductor lasers subject to optical injection. Using the rate equations, a stability analysis is performed and the conditions for an enhanced locking region are deduced from the requirement for the average linewidth enhancement factor appearing in the locking-bandwidth equation to be close to zero. We calculate a stability map for an injection-locked two-section laser with an almost-symmetrical locking region that is greatly enhanced compared to a single-section injection-locked laser with identical material and control parameters.
Related Topics
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Authors
K.E. Chlouverakis, M.J. Adams,