Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9785928 | Optics Communications | 2005 | 7 Pages |
Abstract
We propose a scheme for a photon switch based on quantum interference in interband transitions in an asymmetric semiconductor coupled double quantum well structure. It is shown that, due to the existence of tunneling induced quantum interference, a weak resonant probe field, in the ultraviolet or visible spectral region, can pass through this structure with little absorption. A second coupling field can switch off the probe laser by destroying the destructive interference at the resonant probe frequency. The photon switch can be achieved easily with relatively small pulse intensity (104Â W/cm2) because of a large dipole moment length (10â8Â m) in the interband transition.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yan Xue, Xue-Mei Su, Gang Wang, Yi Chen, Jin-Yue Gao,