Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9786029 | Optics Communications | 2005 | 9 Pages |
Abstract
We present a comprehensive study of the one-dimensional modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions. We obtain the one-dimensional modulation instability growth rate by globally treating the space-charge field and by considering distinction between values of E0 in nonlocal effects and local effects in the space-charge field, where E0 is the field constant correlated with terms in the space-charge field, which depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam's intensity to that of the dark irradiance. The one-dimensional modulation instability growth rate in local effects can be determined from that in nonlocal effects. When the bulk photovoltaic effect is neglectable, irrespective of distinction between values of E0 in nonlocal effects and local effects in the space-charge field, the one-dimensional modulation instability growth rates in nonlocal effects and local effects are those of broad optical beams studied previously in biased photorefractive-nonphotovoltaic crystals. When the external bias field is absent, the one-dimensional modulation instability growth rates in nonlocal effects and local effects predict those of broad optical beams in open- and closed-circuit photorefractive-photovoltaic crystals.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Keqing Lu, Wei Zhao, Yanlong Yang, Jinping Li, Yanpeng Zhang, Jingjun Xu,