Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9786152 | Optics Communications | 2005 | 8 Pages |
Abstract
A low power consumption 2 Ã 2 thermo-optic switch with fast response was fabricated on silicon-on-insulator by anisotropy chemical etching. Blocking trenches were etched on both sides of the phase-shifting arms to shorten device length and reduce power consumption. Thin top cladding layer was grown to reduce power consumption and switching time. The device showed good characteristics, including a low switching power of 145 mW and a fast switching speed of 8 ± 1 μs, respectively. Two-dimensional finite element method was applied to simulate temperature field in the phase-shifting arm instead of conventional one-dimensional method. According to the simulated result, a new two-dimensional index distribution of phase-shifting arm was determined. Consequently finite-difference beam propagation method was employed to simulate the light propagation in the switch, and calculate the power consumption as well as the switching speed. The experimental results were in good agreement with the theoretical estimations.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jingwei Liu, Jinzhong Yu, Shaowu Chen, Jinsong Xia,