| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9786167 | Optics Communications | 2005 | 10 Pages |
Abstract
The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate Îcc on the carrier density N is determined to be Îcc = Constant · N1/2, which is used to explain the experimental results and provides a promising physical picture.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Hai-Chao Zhang, Wei-Zhu Lin, Yu-Zhu Wang,