Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9789518 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 6 Pages |
Abstract
An ab-initio study of the effects of the quantum confinement has been performed for the first time in the ultrathin ZnS films: unpassivated, passivated and the Mn-doped ones. A self-consistent full potential linear muffin tin orbital (FP-LMTO) method has been employed. The studied films have comparatively a large thickness range of 2.7-29.7Â Ã
. The fundamental band gap increases exponentially with decrease in the size of the quantum confinement. The Mn-doped films reveal the localized impurity-induced states within the band gap and also in the conduction band region. The intense optical transitions between the Mn-induced states will appear at about 2.1Â eV which is in excellent agreement with the observed peak in the photoluminescence experiments.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
B.K. Agrawal, Savitri Agrawal,