| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9789531 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
The effects of the intentional disorder in (GaAs)m/(AlAs)6 superlattices were studied using transport techniques. Evidences of a strong electron localization in the superlattices even in the presence of extend states were found. We interpret this result taking into account the disorder which causes the local breakdown of the coherence of the miniband transport and, therefore, give rise to the electron localization. In order to support our experiments, we numerically calculate the capacitance-voltage characteristics of the superlattices and the results were found in good agreement with the measured ones.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Adenilson J. Chiquito, Juliana Lopes,