Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9789574 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
Using the recursion-transfer-matrix (RTM) method combined with nonequilibrium Green's function (NEGF) method, we study the electronic states and current-voltage (I-V) characteristics of junction systems with atomic-scale nanocontacts as a function of the distance between electrodes. We observe a strong nonlinear behavior in the I-V characteristics and correspondingly a gap structure appears in conductance. We find that such a nonlinear behavior emerges when the transport properties change from tunneling to ballistic regimes.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kenji Hirose, Nobuhiko Kobayashi,