Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9789598 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 4 Pages |
Abstract
We have observed the superconductor-insulator (S-I) transition induced by over-deposited Ge in the insulating ultrathin amorphous Nb (a-Nb) film. The experiments are performed by depositing Ge onto the insulating a-Nb film with a thickness of 1.04Â nm. For dGe>0.3nm, where dGe was a thickness for Ge film, the reduction of electrical sheet resistances was seen at low temperature region, suggesting superconductor. The normal sheet resistance at 8Â K decreased monotonically with increasing dGe. The simplest explanation of this S-I transition is that the electron localization effect is weakened due to the addition of Ge film.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ryuichi Masutomi, Takashi Ito, Nobuhiko Nishida,