| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9789603 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
The localization mechanism of transport property in the randomly distributed system of the hole-induced magnetic solitons with the alloy potential fluctuations in diluted magnetic semiconductors has been proposed, by using the effective Lagrangian of diffusion modes. The mechanism of the long relaxation of the spin dynamics below Curie temperature in diluted magnetic semiconductor wells and the bulk system has been discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
I. Kanazawa,