Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9789689 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 11 Pages |
Abstract
We investigate a potential landscape of a ballistic quantum wire (QW) adiabatically connected to electron reservoirs with an applied voltage V. Three qualitatively different types of potential distribution are found to appear depending on a bias. Two characteristic voltages V1 and V2 dependent on positive background charge density and geometry of the structure determine the bias intervals, where these regimes realize. At low bias, VV2 the potential in the central part of the QW becomes nonuniform since the anode reservoir cannot supply enough electrons to screen the electric field.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
B.S. Shchamkhalova, V.A. Sablikov,