Laser-induced photocurrent measurement in quasi-arrayed ZnS quantum dots

Electron transfer from confined structures like quantum film, quantum wire or quantum dot has been studied in conjunction with photoexcitation. The present paper highlights photocurrent generation in the external circuit due to electron transport within the organized ZnS quantum dots by means of tunnelling through the thin dielectric matrix. The average size distribution of the particles was determined by X-ray diffraction (XRD) in consistency with high-resolution electron microscopy (TEM). We demonstrate measurable and sustainable photocurrent in the external circuit as a result of quantum charge transport within arrayed quantum dots excited by high-power photons. The nonlinearity nature of I-V response is marked by Coulomb blockade signature, which serves as a prerequisite for single electron device applications.