| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9789709 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 6 Pages |
Abstract
The binding energy of GaN/InGaN quantum well (QW) has been studied by taking the strain-induced piezoelectric and spontaneous polarization effects into account. The variational calculations are presented for the ground exciton state in the quantum wells, and the third-order susceptibilities, as functions of In content x, well width w, and pump photon energy âÏ, have also been analyzed. In addition, the results are compared with the data of previous work and some conclusions are given.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Junjie Li, Liming Liu, Duanzheng Yao,