| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9789714 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 9 Pages |
Abstract
A comparative study of the InxGa1-xNyAs1-y/GaAs quantum wells (QWs) for 1.3 μm laser emission with different x/y concentrations, has been undertaken, for the first time, involving gain characteristics with doping. By considering different x/y concentrations, we present the influence of doping on transparency carrier density, gain properties and spontaneous emission factor of 1.3 μm InxGa1-xNyAs1-y/GaAs-strained QWs and compare with an equivalent nitrogen-free 1.3 μm InxGa1-xAs/GaAs laser structure. This study provides useful information for the optimazition of doped InxGa1-xNyAs1-y/GaAs on the basis of 1.3 μm emission wavelength.
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Authors
M. OduncuoÄlu, B. Gönül,