Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9789742 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
We report on a new approach for positioning of self-assembled InAs quantum dots on (1Â 1Â 0) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control position and ordering of the quantum dots with epitaxial precision as well as size and size homogeneity. Furthermore, photoluminescence investigations on dot ensembles and on single dots confirm the high homogeneity and the excellent optical quality of the quantum dots fabricated.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D. Schuh, J. Bauer, E. Uccelli, R. Schulz, A. Kress, F. Hofbauer, J.J. Finley, G. Abstreiter,