Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9789755 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
In this work, we present an approach to fabricate GaInN quantum dots. The idea is to have a complete control of the position of the quantum dot during the growth and to use this positioned dot for future functioning. For this purpose we have prepared templates with selectively grown GaN pyramids by MOVPE. After proper adjustment of the GaN growth we have overgrown these templates with InGaN to form the quantum dots on top of the pyramids. Finally the structures were capped with GaN and photoluminescence measurements were performed.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
V. Perez-Solorzano, M. Ubl, H. Gräbeldinger, A. Gröning, H. Schweizer, M. Jetter,