| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9789803 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
The optical performance of InAs/InGaAsP quantum dot (QD) lasers grown on (1Â 0Â 0) InP was studied for three different material structures. The most efficient QD laser structure, having a threshold current of â¼107Â mA and an external differential quantum efficiency of 9.4% at room temperature, was used to form the active region of a grating-coupled external cavity tunable laser. A tuning range of 110Â nm was demonstrated, which was mainly limited by the mirror and internal losses of the uncoated laser diode. Rapid state-filling of the QDs was also demonstrated by observing the evolution of the spectra with increasing injected current.
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Authors
C.Nì. Allen, P.J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, S. Fafard,