Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9789805 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 4 Pages |
Abstract
We demonstrate that excellent 1.3 μm QD laser performance can be achieved with the use of a high-temperature step during the growth of the GaAs spacer layers. An optimised laser structure exhibits a very low room-temperature Jth and operates CW from the ground-state up to at least 105 °C. Spontaneous emission measurements indicate that the high-temperature performance is limited by non-radiative processes rather than by the thermal excitation of carriers into higher energy QD states.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
I.R. Sellers, H.Y. Liu, T.J. Badcock, K.M. Groom, D.J. Mowbray, M. Gutiérrez, M. Hopkinson, M.S. Skolnick,