Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9789808 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
GaAsSb strain-reducing layers (SRLs) are applied to cover InAs quantum dots (QDs) grown on GaAs substrates. The compressive strain induced in InAs QDs is reduced due to the tensile strain induced by the GaAsSb SRL, resulting in a redshift of photoluminescence (PL) peaks of the InAs QDs. A strong PL signal around a wavelength of 1.3 μm was observed even at room temperature. A laser diode containing InAs QDs with GaAsSb SRLs in the active region was fabricated, which exhibits laser oscillation in pulsed operation at room temperature. These results indicate that GaAsSb SRLs have a high potential for fabricating high efficient InAs QDs laser diodes operating at long-wavelength regimes.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Naoki Ohtani,