| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9789813 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
The carrier capture and relaxation of type II ZnTe/ZnSe quantum dots have been investigated with ultrafast time-resolved photoluminescence upconversion. The carrier capture times were 7 and 38Â ps for the Volmer-Weber mode and Stranski-Krastanow mode, respectively. We found that the carrier relaxation of QDs exhibits faster decay under the Volmer-Weber growth mode than under the Stranski-Krastanow growth mode. We attribute the difference of carrier relaxation to the wetting layer formed in the Stranski-Krastanow growth mode.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M.-E. Lee, Y.-C. Yeh, Y.-H. Chung, C.-L. Wu, C.-S. Yang, W.-C. Chou, C.-T. Kuo, D.-J. Jang,