| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9789820 | Physica E: Low-dimensional Systems and Nanostructures | 2005 | 5 Pages |
Abstract
Two different device geometries are fabricated to investigate ballistic transport of electrons in low-dimensional InSb structures. Negative bend resistance is observed in four-terminal devices of channel widths ranging from 0.2 to 0.65 μm. We also report the observation of conductance quantization in quantum point contacts fabricated using in-plane gates. The one-dimensional subbands depopulate with increasing transverse magnetic field up to 3 T. Zeeman splitting is resolved at magnetic fields above â¼0.9 T.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
N. Goel, J. Graham, J.C. Keay, K. Suzuki, S. Miyashita, M.B. Santos, Y. Hirayama,